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Fabrication and evaluation of SiC inverter using SiC-MOSFET

Material type: TextSeries: ; Proceedings of the International Conference on Power Electronics and Drive Systems, p.(6527171), 2013Contained works:
  • Yamane, A
  • Koyanagi, K
  • Kozako, M
  • Fuji, K
  • Hikita, M
Subject(s): Online resources: Abstract: This paper deals with device characteristics of SiC-MOSFET (600 V, 10 A)and efficiency characteristics of SiC inverter when the motor is driven as compared respectively with Si-MOSFET and Si inverter. As a result, it was found that on-resistance of SiC-MOSFET is smaller than that of Si-MOSFET, and switching loss of SiC-MOSEFET is approximately 1/3 compared with Si-MOSFET. It was also found that the SiC inverter is operated at high efficiency about 7.3 percent than the Si inverter at the switching frequency of 100 kHz.
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This paper deals with device characteristics of SiC-MOSFET (600 V, 10 A)and efficiency characteristics of SiC inverter when the motor is driven as compared respectively with Si-MOSFET and Si inverter. As a result, it was found that on-resistance of SiC-MOSFET is smaller than that of Si-MOSFET, and switching loss of SiC-MOSEFET is approximately 1/3 compared with Si-MOSFET. It was also found that the SiC inverter is operated at high efficiency about 7.3 percent than the Si inverter at the switching frequency of 100 kHz.

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