04799nam a22005175i 4500001001800000003000900018005001700027007001500044008004100059020001800100020001900118024002500137040000900162082001700171100003000188245013700218264003800355300003300393336002600426337002600452338003900478347002400517490013000541505112100671520170701792650001703499650001303516650001703529650002503546650001703571650002603588650002203614650004803636650004103684650005503725700002803780700002903808710003403837773002003871776003603891830013003927856009304057942001204150999001704162952010204179978-0-387-24313-9DE-He21320260521091831.0cr nn 008mamaa100301s2005    xxu|    s    |||| 0|eng d  a9780387243139  a997803872431397 a10.1007/b1051222doi  cCICY04a621.38152231 aCroon, Jeroen A.eauthor.10aMatching Properties of Deep Sub-Micron MOS Transistorsh[recurso electrónico] /cby Jeroen A. Croon, Willy Sansen, Herman E. Maes. 1aBoston, MA :bSpringer US,c2005.  aXI, 206 p.bonline resource.  atextbtxt2rdacontent  acomputerbc2rdamedia  arecurso en líneabcr2rdacarrier  atext filebPDF2rda1 aThe Kluwer International Series in Engineering and Computer Science, Analog Circuits and Signal Processing,x0893-3405 ;v8510 aIntroduction: Matching analysis. Importance for circuit design. State of the art. Research objectives. Outline of this book -- Measurement and Modeling of Mismatch. Measurement setup. Experimental setup. Modeling of mismatch in the drain current. Width and length dependence. Example: Yield of a current-steering D/A converter. Conclusions -- Parameter Extraction. Extraction methods. Experimental setup. Comparison of extraction methods. Future issues. Conclusions -- Physical Origins of Mosfet Mismatch. Basic operation of the MOS transistor. Mismatch in the drain current. Physical origins of fluctuations. Conclusions -- Technological Aspects. Technology descriptions. Impact of the gate. Impact of the halo implantation. Comparison of di®erent CMOS technologies. Alternative device concepts. Conclusions -- Impact of Line-Edge Roughness. Characterization of line-edge roughness. Modeling the impact of line-width roughness. Experimental investigation of the impact of LWR. Prediction of the impact of LWR and guidelines. Conclusions -- Conclusions, Future Work and Outlook. Conclusions. Future work -- Outlook.  aMatching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET. 0aENGINEERING. 0aPHYSICS. 0aELECTRONICS. 0aSYSTEMS ENGINEERING.14aENGINEERING.24aCIRCUITS AND SYSTEMS.24aPHYSICS, GENERAL.24aPHYSICS AND APPLIED PHYSICS IN ENGINEERING.24aELECTRONIC AND COMPUTER ENGINEERING.24aELECTRONICS AND MICROELECTRONICS, INSTRUMENTATION.1 aSansen, Willy.eauthor.1 aMaes, Herman E.eauthor.2 aSpringerLink (Online service)0 tSpringer eBooks08iPrinted edition:z9780387243146 0aThe Kluwer International Series in Engineering and Computer Science, Analog Circuits and Signal Processing,x0893-3405 ;v85140uhttp://dx.doi.org/10.1007/b105122zVer el texto completo en las instalaciones del CICY  2ddccER  c32274d32274  00102ddc40708LEaCICYbCICYcELd2025-07-10l0o621.3815r2025-07-10 08:39:31w2025-07-10yER