Fabrication and evaluation of SiC inverter using SiC-MOSFET
Yamane, A.
Koyanagi, K.
Kozako, M.
Fuji, K.
Hikita, M.
text
xx
9999
monographic
und
This paper deals with device characteristics of SiC-MOSFET (600 V, 10 A)and efficiency characteristics of SiC inverter when the motor is driven as compared respectively with Si-MOSFET and Si inverter. As a result, it was found that on-resistance of SiC-MOSFET is smaller than that of Si-MOSFET, and switching loss of SiC-MOSEFET is approximately 1/3 compared with Si-MOSFET. It was also found that the SiC inverter is operated at high efficiency about 7.3 percent than the Si inverter at the switching frequency of 100 kHz.
MOSFET DEVICES
POWER ELECTRONICS
SILICON
Proceedings of the International Conference on Power Electronics and Drive Systems, p.(6527171), 2013
https://drive.google.com/file/d/1Rrekg6mOmh8NcanefM0OoBLGwvBqfAiX/view?usp=drivesdk
https://drive.google.com/file/d/1Rrekg6mOmh8NcanefM0OoBLGwvBqfAiX/view?usp=drivesdk
250602
20260521091516.0