01277nam a2200217Ia 4500003001000000005001700010040000900027245006400036490010600100520052800206650001900734650002200753650001200775700001500787700001700802700001500819700001300834700001500847856015600862008004101018MX-MdCICY20260521091516.0  cCICY10aFabrication and evaluation of SiC inverter using SiC-MOSFET0 vProceedings of the International Conference on Power Electronics and Drive Systems, p.(6527171), 20133 aThis paper deals with device characteristics of SiC-MOSFET (600 V, 10 A)and efficiency characteristics of SiC inverter when the motor is driven as compared respectively with Si-MOSFET and Si inverter. As a result, it was found that on-resistance of SiC-MOSFET is smaller than that of Si-MOSFET, and switching loss of SiC-MOSEFET is approximately 1/3 compared with Si-MOSFET. It was also found that the SiC inverter is operated at high efficiency about 7.3 percent than the Si inverter at the switching frequency of 100 kHz.14aMOSFET DEVICES14aPOWER ELECTRONICS14aSILICON12aYamane, A.12aKoyanagi, K.12aKozako, M.12aFuji, K.12aHikita, M.40uhttps://drive.google.com/file/d/1Rrekg6mOmh8NcanefM0OoBLGwvBqfAiX/view?usp=drivesdkzPara ver el documento ingresa a Google con tu cuenta: @cicy.edu.mx250602s9999    xx |||||s2   |||| ||und|d